RFMD Expands GaN Portfolio

SCTE Cable-Tec Expo Booth 1527 RF Micro Devices (www.rfmd.com) announced availability of the RFPD2650, a new gallium nitride (GaN)-based hybrid power doubler amplifier designed to deliver low distortion performance with the flexibility to optimize for supp...

Content Dam Btr Migrated 2010 10 Rfmd
Content Dam Btr Migrated 2010 10 RfmdSCTE Cable-Tec Expo

Booth 1527

RF Micro Devices (www.rfmd.com) announced availability of the RFPD2650, a new gallium nitride (GaN)-based hybrid power doubler amplifier designed to deliver low distortion performance with the flexibility to optimize for supply current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications, including HFC optical nodes, and to reduce power consumption and improve reliability.

It's designed to supply a minimum gain of 21 dB over the 45-1,003 MHz frequency range and deliver up to 20% power or energy savings, or it can be configured to provide 3 dB higher distortion level performance with the same power consumption.

It leverages GaN HEMT and GaAs pHEMT technology to reduce distortion and enable longer range transmission. Maximum current is 450 mA, and current consumption can be reduced to less than 370 mA for applications requiring reduced distortion performance. Programmed to match the distortion level of competitive devices, the RFPD2650 delivers 2 W of power consumption savings.
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